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T0505XH T0509xH
SENSITIVE GATE TRIACS
FEATURES IT(RMS) = 5A VDRM = 400V to 800V IGT 5mA to 10mA
A1 A2 G
DESCRIPTION The T05xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Tc= 100 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 5 42 40 8 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s Unit A A TO220 non-insulated (Plastic)
I2t dI/dt
Symbol VDRM VRRM
January 1995
Parameter D Repetitive peak off-state voltage Tj = 125C 400
Voltage M 600 S 700 N 800
Unit V
1/5
T0505XH / T0509xH
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.C Junction to case for A.C 360 conduction angle (F=50Hz) Parameter Value 60 5.3 4 Unit C/W C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 40mA IT = 7.1A dIG/dt = 0.5A/s IT= 50mA Gate open IG= 1.2 IGT Tj= 25C Tj= 25C Tj= 125C Tj= 25C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 05 5 1.5 0.2 2 09 10 mA V V s Unit IGM = 4 A (tp = 20 s)
IH * IL
Tj= 25C Tj= 25C I-III-IV II
MAX TYP TYP MAX MAX MAX MIN TYP
5 5 10 1.65 5 1.5
10 10 20
mA mA
VTM * IDRM IRRM dV/dt *
ITM= 7.1A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 2.2 A/ms
Tj= 25C Tj= 25C Tj= 110C Tj= 110C
V A mA 20 V/s
10 1 2 V/s
(dV/dt)c *
Tj= 110C
TYP
* For either polarity of electrode A2 voltage with reference to electrode A1
ORDERING INFORMATION
T
TRIAC MESA GLASS CURRENT
2/5
05
09
SENSITIVITY
M
H
PACKAGE : H = TO220 Non-insulated VOLTAGE
(R)
T0505XH / T0509xH
Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W)
Tcase (o C) Rth = 0 o C/W 5 o C/W 10 o C/W 15 o C/W
P(W)
7
180
7
O
-100 -105 -110 -115 -120
6 5 4 3 2 1 0 0 1 2
= 180 = 120 = 90 = 60 = 30
o o o o
o
6 5 4 3 2
I T(RMS) (A)
3 4 5
1
Tamb ( C)
o
0 0
20
40
60
80
100
120
-125 140
Fig.3 : RMS on-state current versus case temperature.
I T(RMS) (A)
Fig.4 : Relative variation of thermal impedance versus pulse duration.
Zth/Rth 1
6 5 4
Zt h( j-c)
= 180
o
3 2 1 Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130
o
0.1
Zt h( j-a)
tp (s)
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
40 35 30 25 20
Tj initial = 25 C
o
Ih
15 10 5
Tj(oC)
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0 1
10
100
100 0
3/5
(R)
T0505XH / T0509xH
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
Tj initial = 25o C
1000
100
Tj initial o 25 C
100
I TSM
10
Tj max
10
I2t
1
Tj max Vto =0.95V Rt =0.09 0
t (ms)
VTM (V)
1 1
10
0.1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
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T0505XH / T0509xH
PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5
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